@Article{UedaGBRBBAR:2000:PlImIo,
               author = "Ueda, Mario| and Gomes, Geraldo F. and Berni, L. A. and Rossi, J. 
                         O. and Barroso, Joaquim Jose and Beloto, Antonio Fernando and 
                         Abramof, Eduardo and Reuther, H",
          affiliation = "{Instituto Nacional de Pesquisas Espaciais (INPE)} and Campos, S. 
                         Paulo, Brazil and Research Center Rossendorf, Institute of Ion 
                         Beam Physics and Materials Research, Dresden, Germany",
                title = "Plasma immersion ion implantation using a glow discharge source 
                         with controlled plasma potential",
              journal = "Nuclear Instruments and Methods in Physics Research Section B: 
                         Beam Interactions with Materials and Atoms",
                 year = "2000",
               volume = "161-163",
                pages = "1064--1068",
             keywords = "Plasma sources, Plasma immersion ion implantation, Surface 
                         analysis.",
             abstract = "A DC glow discharge plasma source was used in a plasma immersion 
                         ion implantation (PIII) experiment providing nitrogen plasmas with 
                         densities of 1±31010 cm{\"y}3 and temperatures of 5±10 eV. 
                         Nitrogen ions were extracted from these plasmas and implanted in a 
                         variety of immersed samples (Al 5040, SS 304, Si) using repetitive 
                         high voltage pulses from two types of sources: PFN pulser and a 
                         hard tube pulser. Due to the high potential present in our plasma 
                         (350 V), a signi®cant sputter etching of the samples surface 
                         occurred at long irradiation times. An electron shower source was 
                         used to lower this potential allowing its control from 0 to 350 V. 
                         Operating the plasma source at potentials below 70 V reduced the 
                         sputtering to negligible levels and a retained dose of 1:5 1017 
                         cm{\"y}2 was achieved in a silicon surface, after irradiation of 
                         1500 min. For plasma with potential of 350 V (no electron shower), 
                         the retained doses in Al 5040 and SS 304 samples were smaller than 
                         5 1016 cm{\"y}2, for same plasma and pulser conditions (but 2500 
                         min irradiation), con®rming the deleterious eects of sputtering 
                         measured in Si samples. Upon using the higher repetition rate 
                         pulser, the treatment time was reduced by a factor of 700, thus 
                         easing considerably the sputtering problem. {\'O} 2000 Elsevier 
                         Science B.V. All rights reserved.",
           copyholder = "SID/SCD",
                 issn = "0168-583X and 0167-5087",
             language = "en",
           targetfile = "plasma immersion.pdf",
        urlaccessdate = "10 maio 2024"
}